MTB50N10E3 Datasheet, Mosfet, Cystech Electonics

MTB50N10E3 Features

• Mosfet
• Low Gate Charge
• Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
• Repetitive Avalanche Rated
• Fast Sw

PDF File Details

Part number:

MTB50N10E3

Manufacturer:

Cystech Electonics

File Size:

337.69kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet.

MTB50N10E3 Application

• Applications or systems.
• CYStek assumes no liability for any consequence of custom

TAGS

MTB50N10E3

Cystech Electonics

📁 Related Datasheet

MTB50N06EL - TMOS POWER FET (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06EL/D Advance Information TMOS E-FET.™ Power Field Effect Transistors D2PAK fo.

MTB50N06V - TMOS POWER FET (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS.

MTB50N06V - Power MOSFET (ON Semiconductor)
MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and .

MTB50N06VL - TMOS POWER FET (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO.

MTB5000 - LED Lamp Arrays (Marktech Corporate)
LED Lamp Ar rays Arr FEA TURES FEATURES • 5 segment LED Bar Graph Array • Solid state reliability OPT O-ELECTRICAL CHARA CTERISTICS (T a = 25°C) OPTO.

MTB50P03HDL - TMOS POWER FET (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Moun.

MTB50P03HDL - P-Channel Power MOSFET (ON Semiconductor)
MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalan.

MTB52N06V - TMOS POWER FET (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB52N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS.

MTB52N06V - Power MOSFET (ON Semiconductor)
MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and .

MTB52N06VL - TMOS POWER FET (Motorola)
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB52N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO.