• Part: MTB50N10E3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 337.69 KB
Download MTB50N10E3 Datasheet PDF
Cystech Electonics
MTB50N10E3
Features - Low Gate Charge - Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A - Repetitive Avalanche Rated - Fast Switching Characteristic - Pb-free lead plating and Ro HS pliant package 100V 29A 32mΩ (typ) 33mΩ (typ) Symbol Outline TO-220 G:Gate D:Drain S:Source G DS Ordering Information Device MTB50N10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V,...