MTB50N10E3 Datasheet - Cystech Electonics

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MTB50N10E3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C893E3 Issued Date : 2016.06.01 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTB50N10.

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Datasheet Details

Part number:

MTB50N10E3

Manufacturer:

Cystech Electonics

File Size:

337.69 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ)

Applications

* or systems.
* CYStek assumes no liability for any consequence of custom

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MTB50N10E3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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