MTB50N10E3 - N-Channel Enhancement Mode Power MOSFET
MTB50N10E3 Features
* Low Gate Charge
* Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ)
