MTB50N10E3 Datasheet - Cystech Electonics

MTB50N10E3 N-Channel Enhancement Mode Power MOSFET

MTB50N10E3 Features

* Low Gate Charge

* Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A

* Repetitive Avalanche Rated

* Fast Switching Characteristic

* Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ)

Datasheet Details

MTB50N10E3

Cystech Electonics

337.69 KB

N-channel enhancement mode power mosfet.

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