* Low Gate Charge
* Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ)
MTB50N10E3 Datasheet (337.69 KB)
MTB50N10E3
Cystech Electonics
337.69 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB50N10.
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