MTB5D0C03J4 N- and P-channel enhancement mode power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C704J4 Issued Date : 2016.06.02 Revised Date : 2016.06.03 Page No.: 1/13 N & P-Channel Enhancement Mode Power.

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Datasheet Specifications

Part number: MTB5D0C03J4
Manufacturer: Cystech Electonics
File Size: 671.20 KB
Datasheet: MTB5D0C03J4-CystechElectonics.pdf
Description: N- and P-channel enhancement mode power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ. ) @VGS=(-)10V RDSON(typ. ) @VGS=(-)4.5V N-CH 30V 8.6A 33.5A 6.7 mΩ 8.3 mΩ P-CH -30V -6.8A -26.5A 13.4 mΩ 20.1 mΩ Equivalent Circ

MTB5D0C03J4 Distributors

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MTB5D0C03J4 and P-channel enhancement mode power MOSFET Cystech Electonics

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