MTB5D0C03J4 - N- and P-channel enhancement mode power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB5D0C03J4
Manufacturer	Cystech Electonics
File Size	671.20 KB
Description	N- and P-channel enhancement mode power MOSFET
Datasheet	MTB5D0C03J4-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
RoHS compliant & Halogen-free package BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C RDSON(typ. ) @VGS=(-)10V RDSON(typ. ) @VGS=(-)4.5V N-CH 30V 8.6A 33.5A 6.7 mΩ 8.3 mΩ P-CH -30V -6.8A -26.5A 13.4 mΩ 20.1 mΩ Equivalent Circuit MTB5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source G2 S2 G1 S1 Absolute Maximum Ratings (TA=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Co.

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Published: Sep 4, 2016 |