• Part: MTB5D8N03ARV8
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 537.82 KB
Download MTB5D8N03ARV8 Datasheet PDF
Cystech Electonics
MTB5D8N03ARV8
Features - Low Gate Charge - Fast Switching Characteristic BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON) typ. @ VGS=10V, ID=12A RDS(ON) typ. @ VGS=4.5V, ID=9A 30V 15A 12A 5.8mΩ 9mΩ Equivalent Circuit Outline DFN3×3 Ordering Information Device Package Shipping DFN3×3 MTB5D8N03ARV8-0-T6-G (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStek Electronics Corp. Absolute Maximum Ratings (TA=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C (silicon limit) Continuous Drain Current @ VGS=10V, TC=25C (package limit) Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V,...