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MTB5D8N03ARV8 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge.
  • Fast Switching Characteristic BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON) typ. @ VGS=10V, ID=12A RDS(ON) typ. @ VGS=4.5V, ID=9A 30V 15A 12A 5.8mΩ 9mΩ Equivalent Circuit MTB5D8N03ARV8 Outline DFN3×3 Ordering Information Device Package Shipping DFN3×3 MTB5D8N03ARV8-0-T6-G (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p.

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Datasheet Details

Part number MTB5D8N03ARV8
Manufacturer Cystech Electonics
File Size 537.82 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB5D8N03ARV8 Datasheet
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CYStek Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB5D8N03ARV8 Spec. No. : C664V8 Issued Date : 2019.12.12 Revised Date : 2024.02.02 Page No. : 1/9 Features • Low Gate Charge • Fast Switching Characteristic BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON) typ. @ VGS=10V, ID=12A RDS(ON) typ. @ VGS=4.5V, ID=9A 30V 15A 12A 5.
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