Description
The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
Features
- High BVCEO.
- Low VCE(SAT).
- High current gain.
- Monolithic construction with built-in base-emitter shunt resistors.
- Pb-free lead plating package
Equivalent Circuit
BTD5510F3
B
R1≈4k R2≈60
C
E B：Base C：Collector E：Emitter
Outline
TO-263
BCE
Ordering Information
Device BTD5510F3-0-T7-X
Package
Shipping
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for R.
BTD5510F3_Cystech.pdf
