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DT4955A -30V P+P-Channel Enhancement Mode MOSFET

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Description

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DT4955A -30V P+P-Channel Enhancement Mode MOSFET The DT4955A uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.

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Datasheet Specifications

Part number
DT4955A
Manufacturer
DCY
File Size
2.31 MB
Datasheet
DT4955A-DCY.pdf
Description
-30V P+P-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 www. dcy-china. com -ID Drain Current (A) Typical Characteristics 12 10 VGS=-10V VGS=-7V 8 VGS=-5V 6 VGS=-4.5V 4 VGS=-3V RDSON (mΩ) DT4955A -30V P+P-Channel Enhancement Mode MOSFET 50 ID=-12A 40 30 2 -VGS Gate to Source Voltage (V) 0

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