BSS84WQ 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Description

BSS84WQ 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS -50V RDS(ON) 10Ω @ VGS = -5V ID TA = +25°C -164mA Descriptio.
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: BSS84WQ
Manufacturer: DIODES ↗
File Size: 528.16 KB
Datasheet: BSS84WQ-DIODES.pdf
Description: 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* General Purpose Interfacing Switch
* Power Management Functions

BSS84WQ Distributors

📁 Related Datasheet

BSS84W BSS84W-G BSS84 BSS84-HF BSS8402D BSS8402DW

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BSS84WQ 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DIODES

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