D20V0L1B2WSQ
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Low capacitance bidirectional tvs diode. and Applications This new TVS diode is designed to protect sensitive electronics from the damage due to ESD. The combination of small
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D20V0L1B2WS - LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
(Diodes)
ADVANCE INFORMATION
Features
Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV
1 Channel of ESD Protection Low C.
D20V0L1B2LP - 20V BIDIRECTIONAL TVS DIODE
(Diodes)
ADVANACDEV IANNFCOERIMNAFTOIROMNATION
D20V0L1B2LP
20V BIDIRECTIONAL TVS DIODE
Product Summary
VBR Min 21V
IPP Max 2A
CT Typ 7pF
Description
This.
D20 - Memory Micromodules
(STMicroelectronics)
D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifical.
D200 - SIP DC/DC Converters
(uPD)
..
D200 Series
Single & Dual Output Miniature, 2W SIP DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nomin.
D2001UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2001UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GAT.
D2002 - Stereo Headphone Amplifier
(Shaoxing Silicore Technology)
Sheet4U.STEREO HEADPHONE AMPLIFIER .DataDESCRIPTION wThe D2002 is developed for play-back stereo wwheadphone equipment 3V use).
Silicore
3V USE D2.
D2002UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2002UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GAT.
D2003UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2003UK
MECHANICAL DATA
AD
B
H C
23
G
1
E 54
F
ROHS COMPLIANT METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS .
D2004UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W.
D2005 - NPN Transistor
(ROHM)
.