DMN6041SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Description

DMN6041SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 48mΩ @ VGS = 10V 60mΩ @ VGS = 4.5V ID TA = +25°C 4.1A 3.8A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMN6041SVT
Manufacturer: DIODES ↗
File Size: 545.19 KB
Datasheet: DMN6041SVT-DIODES.pdf
Description: 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* Low Input Capacitance
* Low On-Resistance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/

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DMN6041SVT 60V N-CHANNEL ENHANCEMENT MODE MOSFET DIODES

DIODES DMN6041SVT-like datasheet