DMP3165SVTQ
611.16kb
Dual p-channel enhancement mode mosfet. This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PP
TAGS
📁 Related Datasheet
DMP3165L - P-CHANNEL MOSFET
(DIODES)
ADVANCED INFORMATION
DMP3165L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) Max
90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V
ID T.
DMP3165LQ - P-CHANNEL MOSFET
(DIODES)
AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN
DMP3165LQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) Max
90mΩ @ VGS = -10V 134mΩ.
DMP3160L - P-Channel MOSFET
(Diodes)
DMP3160L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON)
122mΩ @ VGS = -10V 190mΩ @ VGS = -4.5V
ID TA = +25°C
-2.7A -2.0A
De.
DMP3164LVT - Dual P-CHANNEL MOSFET
(DIODES)
DMP3164LVT
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON)
95mΩ @ VGS = -10V 140mΩ @ VGS = -4.5V
ID TA = +25°C
-2.8A -2..
DMP3100L - P-Channel MOSFET
(Diodes)
DMP3100L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance: 100mΩ @ VGS = -10V, ID = -2.7A 170mΩ @ VGS = -4.5V, ID = -2.0A
• Low Gate Th.
DMP3105LVT - P-Channel MOSFET
(Diodes)
Product Summary
BVDSS -30V
RDS(ON) max
75m @ VGS = -10V 98m @ VGS = -4.5V
ID TA = +25°C
-3.9A -3.3A
DMP3105LVT
30V P-CHANNEL ENHANCEMENT MODE MO.
DMP3120L - P-Channel MOSFET
(Diodes)
Features
• Low On-Resistance: RDS(ON) < 120mΩ @ VGS = -4.5V RDS(ON) < 240mΩ @ VGS = -2.5V
• Low Gate Threshold Voltage • Low Input Capacitance • Fast .
DMP3125L - 30V P-CHANNEL ENHANCEMENT MODE MOSFET
(Diodes)
ADVANCED INFORMATION
DMP3125L
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max
95mΩ @ VGS = -10V 145mΩ @ VGS = -4.5V
.
DMP3130L - P-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
V(BR)DSS -30V
RDS(on) max
77mΩ@ VGS = -10V 95mΩ@ VGS = -4.5V 150mΩ@ VGS = -2.5V
ID TA = 25°C
-3.5A
-3.0A
-2.4A
Descri.
DMP3130LQ - P-Channel MOSFET
(Diodes)
DMP3130LQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -30V
RDS(ON) max
77mΩ@ VGS = -10V 95mΩ@ VGS = -4.5V 150mΩ@ VGS = -2.5V
ID TA .