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Technical Data TRANSISTOR
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Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
300.0 V 180.0 V
10.0 V 6.0 A 3.0 A
87.5 W 2.0 °C/W
200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
183T2B NPN empty empty TO-3 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCEO
IC = 50.0 mA
(1) 180.0
-
V
2. BVCBO
IE = 3.0 mA
(1) 300.0
-
V
3. ICEO
VCE = 180.0 V
- 1.0 mA
4. ICES
VCE = 250.0 V
- 1.0 mA
5. IEBO
VEB = 10.0 V
- 1.0 mA
6. hFE
IC = 2.0 A, VCE = 4.0 V
(1) 30.0
90.0
-
7.
183T2B Datasheet
