DS1265W Datasheet (Dallas Semiconducotr) - 3.3V 8Mb Nonvolatile SRAM

DS1265W, 3.3V 8Mb Nonvolatile SRAM

A0 *A19 DQ0 *DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8

DS1265W Features

* 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 100ns Lithium energy source is electrically disconnected