DS2016 Datasheet (Dallas Semiconducotr) - 2k x 8 3V/5V Operation Static RAM

DS2016, 2k x 8 3V/5V Operation Static RAM

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random acce

DS2016 Features

* Low-power CMOS design

* Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V

* Full operation for VCC = 5.5V to 2.7V

* Data retention voltage = 5.5V to 2.0V

* Fast 5V access time - DS2016-100 100ns

* Red