• Part: DS2016
  • Description: 2k x 8 3V/5V Operation Static RAM
  • Manufacturer: Dallas Semiconducotr
  • Size: 162.69 KB
Download DS2016 Datasheet PDF
Dallas Semiconducotr
DS2016
FEATURES - Low-power CMOS design - Standby current - 50n A max at t A = +25°C VCC = 3.0V - 100n A max at t A = +25°C VCC = 5.5V - 1µA max at t A = +60°C VCC = 5.5V - Full operation for VCC = 5.5V to 2.7V - Data retention voltage = 5.5V to 2.0V - Fast 5V access time - DS2016-100 100ns - Reduced-speed 3V access time - DS2016-100 250ns - Operating temperature range of -40°C to +85°C - Full static operation - TTL patible inputs and outputs over voltage range of 5.5V to 2.7V - Available in 24-pin DIP and 24-pin SO packages - Suitable for both battery operated and battery backup applications PIN ASSIGNMENT A7 1 A6 2 A5 3 A4 4 A3 5 A2 6 A1 7 A0 8 DQ0 9 DQ1 10 DQ2 11 GND 12 23 A8 22 A9 21 WE 20 OE 19 A10 18 CE 17 DQ7 16 DQ6 15 DQ5 14 DQ4 13 DQ3 DS2016 24-Pin DIP (600mil) DS2016R 24-Pin SO (300mil) PIN DESCRIPTION A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output - Chip Enable...