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DS2016 Datasheet - Dallas Semiconducotr

2k x 8 3V/5V Operation Static RAM

DS2016 Features

* Low-power CMOS design

* Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V

* Full operation for VCC = 5.5V to 2.7V

* Data retention voltage = 5.5V to 2.0V

* Fast 5V access time - DS2016-100 100ns

* Red

DS2016 General Description

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random acce.

DS2016 Datasheet (162.69 KB)

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Datasheet Details

Part number:

DS2016

Manufacturer:

Dallas Semiconducotr

File Size:

162.69 KB

Description:

2k x 8 3v/5v operation static ram.

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DS2016 Operation Static RAM Dallas Semiconducotr

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