RD-19230 Datasheet, converter equivalent, Data Device

RD-19230 Features

• Converter
• Accuracy up to 1.3 Arc Minutes
• Internal Synthesized Reference
• +5 Volt Only Option
• Programmable Resolution, Dual Bandwidth and Tracking Rate

PDF File Details

Part number:

RD-19230

Manufacturer:

Data Device

File Size:

607.16kb

Download:

📄 Datasheet

Description:

16-bit monolithic tracking resolver to digital converter. The RD-19230 is a small and versatile, low cost, state-of-the-art 16bit monolithic Resolver-to-Digital Converter. This single chip co

RD-19230 Application

• Applications
• -40° to +85°C Operating Temperature
• Programmable for LVDT Input ee DataSh APPLICATIONS With its low cost, small

TAGS

RD-19230

Data Device

📁 Related Datasheet

RD-624 - Pyroelectric Infrared Sensor (Winsen)
Pyroelectric Infrared Sensor （Model：RD-624） User’s Manual Version: 1.2 Valid from: 2016-03-01 Zhengzhou Winsen Electronics Technology Co., Ltd Statem.

RD-XS27KR - Manual (Toshiba)
E2G70RD_RU.book Page 1 Monday, July 30, 2007 2:32 PM Введение Подключения HDD И DVD ВИДЕОМАГНИТОФОН RD-XS27KR Руководство пользователя Основная на.

RD00HHS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HHS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3 1.5+/-0.1 0..

RD00HVS1 - RoHS Compliance (Mitsubishi Electric)
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Complian.

RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode.

RD01MUS1 - Silicon RF Power MOS FET (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9.

RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is.

RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
< Silicon RF Power MOS FET (Discrete) > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz, 2W, 3.6V DESCRIPTION RD02LUS2 is a MOS FET .

RD02MUS1 - Silicon MOSFET Power Transistor (Mitsubishi Electric)
.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 0.2+/-0.05 (0.22) (0.22) (0.25).