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DC COMPONENTS CO., LTD.
R
I772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver.
TO-251
.268(6.80) .252(6.40) .217(5.50) .205(5.20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.022(0.55) .018(0.45) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG
Rating -40 -30 -5 -3 -7 -600 10 +150 -55 to +150
Unit V V V A A mA W
o o
.284(7.20) .