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LB123T TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

LB123T Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R LB123T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descript.
Designed for high voltage, high speed switching circuits, and amplifier applications .

LB123T Applications

* . Pinning 1 = Emitter 2 = Collector 3 = Base .041(1.05) .037(0.95) .154(3.91) .150(3.81) TO-126 .304(7.72) .285(7.52) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol

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Datasheet Details

Part number
LB123T
Manufacturer
Dc Components
File Size
213.84 KB
Datasheet
LB123T_DcComponents.pdf
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TECHNICAL SPECIFICATIONS NPN EPITAXIAL PLANAR TRANSISTOR Dc Components
Dc Components LB123T-like datasheet