• Part: DP3090
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Developer Microelectronics
  • Size: 294.38 KB
Download DP3090 Datasheet PDF
Developer Microelectronics
DP3090
Features - Uses advanced Trench MOS technology - Extremely low on-resistance RDS(on) RDS(on) typ. - Excellent Qgx RDS(on) product(FOM) - Qualified according to JEDEC criteria Applications - Motor control and drive - Battery management - UPS (Uninterrupible Power Supplies) TO-252 Top view Bottom View Product Summary Vds ID RDS(ON) typ. 30V 90A 3.2mΩ 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # Package Packing Reel Size Tape Width Qty TO-252 Reel N/A N/A 2500pcs Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H, Rg=25Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Thermal Resistance Parameter Thermal resistance, junction -...