2DB1119S Datasheet, Transistor, Diodes

2DB1119S Features

• Transistor
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications

PDF File Details

Part number:

2DB1119S

Manufacturer:

DIODES ↗

File Size:

150.44kb

Download:

📄 Datasheet

Description:

Pnp surface mount transistor.

2DB1119S Application

• Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2) Mechanical Data
• Case: SOT89-3L
<

TAGS

2DB1119S

Diodes

📁 Related Datasheet

2DB1132P - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1132Q - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1132R - 32V PNP POWER SWITCHING TRANSISTOR (Diodes)
2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty.

2DB1182Q - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collecto.

2DB1184Q - 50V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collec.

2DB1188P - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally .

2DB1188Q - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally .

2DB1188R - 32V PNP MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally .

2DB1386Q - 20V PNP MEDIUM POWER TRANSISTOR (Diodes)
2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -20V  IC = -5A high Continuous Current  Low saturation voltage VCE(sat) < -1.

2DB1386R - 20V PNP MEDIUM POWER TRANSISTOR (Diodes)
2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -20V  IC = -5A high Continuous Current  Low saturation voltage VCE(sat) < -1.