BCP5316TA
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Pnp medium power transistors.
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BCP5316TC - PNP MEDIUM POWER TRANSISTORS
(Diodes)
Features
BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturati.
BCP5316Q - 80V PNP MEDIUM POWER TRANSISTORS
(Diodes)
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
• BVCEO >.
BCP5316QTA - 80V PNP MEDIUM POWER TRANSISTORS
(Diodes)
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
• BVCEO >.
BCP5316QTA - PNP MEDIUM POWER TRANSISTORS
(Diodes)
Features
BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturati.
BCP5310TA - PNP MEDIUM POWER TRANSISTORS
(Diodes)
Features
BVCEO > -45V, -60V & -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturati.
BCP53 - MEDIUM POWER AMPLIFIER
(STMicroelectronics)
BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE.
BCP53 - PNP General Purpose Amplifier
(Fairchild Semiconductor)
BCP53 — PNP General-Purpose Amplifier
March 2014
BCP53 PNP General-Purpose Amplifier
Description
This device is designed for general-purpose medium.
BCP53 - PNP medium power transistors
(NXP)
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
Rev. 9 — 19 October 2011
Product data sheet
1. Product profile
1.1 General description.
BCP53 - PNP Silicon AF Transistors
(Infineon Technologies AG)
PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types.
BCP53 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
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General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Ober.