D14V0S1U2WS
269.83kb
1 channel unidirectional tvs. This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and hi
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D14V0H1U2LP1610 - 1-CHANNEL HIGH SURGE TVS DIODE
(DIODES)
Product Summary
VBR (Min) 15V
IPP (Max) 50A
CT (Typ) 320pF
Description
This new generation TVS is designed to protect sensitive electronics from t.
D14V0H1U2WS - 1 CHANNEL UNIDIRECTIONAL TVS
(Diodes)
ADVANCED INFORMATION
Product Summary
VBR min 14.5V
Ipp max 25A
CIN typ 160pF
Description
This new generation TVS is designed to protect sensitive.
D1400 - 2SD1400
(Sanyo)
..
.
D14006 - 18-bit Static Shift Register
(Hitachi)
Unit: mm
19.20 20.32 Max 14 8 6.30 7.40 Max 1
2.39 Max
1.30
7 7.62
0.51 Min
2.54 Min 5.06 Max
2.54 ± 0.25
0.48 ± 0.10
0.25 – 0.05 0° – 15°
+ 0.
D14008 - 4-bit Full Adder
(Hitachi)
19.20 20.00 Max 16 9 7.40 Max 6.30
Unit: mm
1 1.3
1.11 Max
8
0.51 Min
2.54 Min 5.06 Max
7.62
2.54 ± 0.25
0.48 ± 0.10
0.25 – 0.05 0° – 15°
Hit.
D1402 - 2SD1402
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1402
..
DESCRIPTION ·With TO-3PN package ·High spe.
D1403 - 2SD1403
(Wing Shing)
2SD1403
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.
D1404 - Silicon NPN Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·.
D1405 - 2SD1405
(Toshiba)
:
——
A
SILICON NPN TRIPLE DIFFUSED TYPE
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I.
D1406 - 2SD1406
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1406
·
..
DESCRIPTION ·With TO-220Fa package ·Coll.