G4812SS - N-CHANNEL ENHANCEMENT MODE MOSFET
G4812SS Features
* DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
* Low RDS(ON) - minimizes conduction losses
* Low VSD - reducing the losses due to body diode conduction
* Low Qrr - lower Qrr of the integrated Schottky reduce
