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501N04A Datasheet - Directed Energy

501N04A RF Power MOSFET

501N04A Features

* SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM

501N04A Datasheet (110.34 KB)

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Datasheet Details

Part number:

501N04A

Manufacturer:

Directed Energy

File Size:

110.34 KB

Description:

Rf power mosfet.

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501N04A Power MOSFET Directed Energy

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