501N04A Datasheet - Directed Energy

501N04A, RF Power MOSFET

Directed Energy, Inc.An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.

datasheet Preview Page 1 from Datasheet4u.com

501N04A_DirectedEnergy.pdf

501N04A Datasheet Preview — Preview of 501N04A PDF

Datasheet Details

Part number:

501N04A

Manufacturer:

Directed Energy

File Size:

110.34 KB

Description:

RF Power MOSFET

Features

* SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM

501N04A Distributors

📁 Related Datasheet

5018 5018BMTCX 5019MTC 501R07NxxxxVxx 501R07WxxxxVxx 501R07XxxxxVxx

📌 All Tags

501N04A Power MOSFET Directed Energy

Directed Energy 501N04A-like datasheet