GP401LSS18 Datasheet - Dynex Semiconductor

GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circ.

GP401LSS18 Features

* s n - Channel s Enhancement Mode s High Input Impedance s Optimised For High Power High Frequency Operation s Isolated Base s Ultra Low VCE(sat) s 400A Per Module Module outline type code: L (See package details for further information) Fig.1 Electrical connections - (not to scale) 2(E) 5(E1) 3(G

GP401LSS18_DynexSemiconductor.pdf