Datasheet Details
Part number:
GP801DDS18
Manufacturer:
Dynex Semiconductor
File Size:
143.04 KB
Description:
Dual switch low vce(sat) igbt module.
GP801DDS18_DynexSemiconductor.pdf
GP801DDS18_DynexSemiconductor.pdf
Datasheet Details
Part number:
GP801DDS18
Manufacturer:
Dynex Semiconductor
File Size:
143.04 KB
Description:
Dual switch low vce(sat) igbt module.
GP801DDS18, Dual Switch Low VCE(SAT) IGBT Module
GP801DDS18 Features
* s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Hig
📁 Related Datasheet
📌 All Tags