GP801DDS18 Datasheet, Module, Dynex Semiconductor

GP801DDS18 Features

  • Module s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)

PDF File Details

Part number:

GP801DDS18

Manufacturer:

Dynex Semiconductor

File Size:

143.04kb

Download:

📄 Datasheet

Description:

Dual switch low vce(sat) igbt module.

Datasheet Preview: GP801DDS18 📥 Download PDF (143.04kb)
Page 2 of GP801DDS18 Page 3 of GP801DDS18

GP801DDS18 Application

  • Applications s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) High Reliability Inverters Motor Controllers Traction Drive

TAGS

GP801DDS18
Dual
Switch
Low
VCESAT
IGBT
Module
Dynex Semiconductor

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