Part number:
GP801DDS18
Manufacturer:
Dynex Semiconductor
File Size:
143.04 KB
Description:
Dual switch low vce(sat) igbt module.
GP801DDS18 Datasheet (143.04 KB)
* s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 800A 1600A APPLICATIONS s s s s 12(C2) 2(C2) 4(E2) 1(E1) 7(C ) 1 11(G2) 10(E2) 3(C1) 5(E1) 6(G1) Hig
GP801DDS18 Datasheet (143.04 KB)
GP801DDS18
Dynex Semiconductor
143.04 KB
Dual switch low vce(sat) igbt module.
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