TA329xxQ Features
* s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c. Mains VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V 1
TA32910Q_DynexSemiconductor.pdf
Datasheet Details
TA329xxQ, TA32910Q
Dynex Semiconductor
128.65 KB
Asymmetric thyristor.
This datasheet PDF includes multiple part numbers: TA329xxQ, TA32910Q.
Please refer to the document for exact specifications by model.
TA329xxQ Distributor
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