MA9264 Datasheet - Dynex

MA9264 Radiation Hard 8192x8 Bit Static RAM

MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state. See Application Note “Overview of the Dynex Semiconductor Radi.

MA9264 Features

* s 1.5µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 70ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1011 Rad(Si)/sec s SEU 4.3 x 10-11 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 100µA Typical s -55°C to +125°C Operation s All Inputs and Outputs Fu

MA9264 Datasheet (240.16 KB)