NTD08 Datasheet, Rectifiers, EDI

PDF File Details

Part number:

NTD08

Manufacturer:

EDI

File Size:

64.84kb

Download:

📄 Datasheet

Description:

High voltage-high current silicon rectifiers.

Datasheet Preview: NTD08 📥 Download PDF (64.84kb)
Page 2 of NTD08

TAGS

NTD08
HIGH
VOLTAGE-HIGH
CURRENT
SILICON
RECTIFIERS
EDI

📁 Related Datasheet

NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.

NTD106B - Thyristor/Diode Module (Naina Semiconductor)
Naina Semiconductor Ltd. NTD106B Features Thyristor/Diode Module, 106A • Improved glass passivation for high reliability • Exceptional stability a.

NTD110N02R - Power MOSFET (ON Semiconductor)
NTD110N02R, STD110N02R MOSFET – Power, N-Channel, DPAK 24 V, 110 A Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.

NTD110N02R-001G - N-Channel MOSFET (VBsemi)
NTD110N02R-001G-VB NTD110N02R-001G-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS.

NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.

NTD122C - Thyristor/Diode Module (Naina Semiconductor)
Naina Semiconductor Ltd. NTD122C Features Thyristor/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability a.

NTD12N10 - Power MOSFET (ON Semiconductor)
NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi. V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel.

NTD132C - Thyristor/Diode Module (Naina Semiconductor)
Naina Semiconductor Ltd. NTD132C Features Thyristor/Diode Module, 137A • Improved glass passivation for high reliability • Exceptional stability a.

NTD14N03R - Power MOSFET 14 Amps N-Channel DPAK (ON Semiconductor)
.. NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • Planar HD3e Process for Fast Switching Performance L.

NTD15 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts