NTD08
EDI
64.84 KB
High voltage-high current silicon rectifiers.
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
📁 Related Datasheet
NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD106B - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability a.
NTD110N02R - Power MOSFET
(ON Semiconductor)
NTD110N02R, STD110N02R
MOSFET – Power, N-Channel, DPAK
24 V, 110 A
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi.
NTD110N02R-001G - N-Channel MOSFET
(VBsemi)
NTD110N02R-001G-VB
NTD110N02R-001G-VB Datasheet
N-Channel 20-V (D-S)175 _C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0045 @ VGS.
NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
(EDI)
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD122C - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD122C
Features
Thyristor/Diode Module, 130A
• Improved glass passivation for high reliability • Exceptional stability a.
NTD12N10 - Power MOSFET
(ON Semiconductor)
NTD12N10 Power MOSFET 12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features http://onsemi.
V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel.
NTD132C - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD132C
Features
Thyristor/Diode Module, 137A
• Improved glass passivation for high reliability • Exceptional stability a.
