Datasheet4U Logo Datasheet4U.com

NTD12 Datasheet - EDI

NTD12 HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08 NTD 10 NTD 12 NTD 15 NTD 20 NTD 25 NTD 30 NTD 35 NTD 40 www.DataSheet4U.com NTD 45 NTD 50 NTD 60 8,000 10,000 12,000 15,000 20,000 25,000 30,000 35,000 40,000 45,000 50,000 60,000 300 300 300 300 3.

NTD12 Datasheet (64.84 KB)

Preview of NTD12 PDF
NTD12 Datasheet Preview Page 2

Datasheet Details

Part number:

NTD12

Manufacturer:

EDI

File Size:

64.84 KB

Description:

High voltage-high current silicon rectifiers.

📁 Related Datasheet

NTD10 HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)

NTD106B Thyristor/Diode Module (Naina Semiconductor)

NTD110N02R Power MOSFET (ON Semiconductor)

NTD110N02R-001G N-Channel MOSFET (VBsemi)

NTD122C Thyristor/Diode Module (Naina Semiconductor)

NTD12N10 Power MOSFET (ON Semiconductor)

NTD132C Thyristor/Diode Module (Naina Semiconductor)

NTD14N03R Power MOSFET 14 Amps N-Channel DPAK (ON Semiconductor)

TAGS

NTD12 HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS EDI

NTD12 Distributor