RBV3502
EIC discrete Semiconductors
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Silicon bridge rectifiers.
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RBV3500 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
FEATURE.
RBV35005 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .
RBV3501 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .
RBV3501 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
FEATURE.
RBV3502 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .
RBV3504 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .
RBV3504 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
FEATURE.
RBV3506 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .
RBV3506 - SILICON BRIDGE RECTIFIERS
(EIC discrete Semiconductors)
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
FEATURE.
RBV3508 - Silicon Bridge Rectifiers
(GME)
Production specification
Silicon Bridge Rectifiers
RBV35005--RBV3510
FEATURES
Rating to 1000V PRV Surge overload rating to 400 Amperes peak .