RBV3510 Datasheet, Rectifiers, EIC discrete Semiconductors

RBV3510 Features

• Rectifiers :
• High current capability High surge current capability High reliability Low reverse current Low forward

PDF File Details

Part number:

RBV3510

Manufacturer:

EIC discrete Semiconductors

File Size:

18.11kb

Download:

📄 Datasheet

Description:

Silicon bridge rectifiers.

TAGS

RBV3510

EIC discrete Semiconductors

📁 Related Datasheet

RBV3510 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .

RBV3500 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
RBV3500 - RBV3510 PRV : 50 - 1000 Volts Io : 35 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURE.

RBV35005 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .

RBV3501 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .

RBV3501 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
RBV3500 - RBV3510 PRV : 50 - 1000 Volts Io : 35 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURE.

RBV3502 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .

RBV3502 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
RBV3500 - RBV3510 PRV : 50 - 1000 Volts Io : 35 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURE.

RBV3504 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .

RBV3504 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
RBV3500 - RBV3510 PRV : 50 - 1000 Volts Io : 35 Amperes SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 FEATURE.

RBV3506 - Silicon Bridge Rectifiers (GME)
Production specification Silicon Bridge Rectifiers RBV35005--RBV3510 FEATURES  Rating to 1000V PRV  Surge overload rating to 400 Amperes peak  .