BAV19WS
FEATURES
:
- Silicon Epitaxial Planar Diode
- For General Purpose
- Pb / Ro HS Free
MECHANICAL DATA :
- Case : SOD-323 plastic Case max. 0.004(0.1) 0.049 (1.25) max.
0.059 (1.5) 0.043 (1.1) min. 0.010 (0.25)
Dimensions in inches and (millimeters) max. 0.006 (0.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
Symbol VR VRM
BAV19WS 100 120
BAV20WS 150 200
BAV21WS 200
IF(AV)
IFSM Ptot
1.0 200 1)
Tj 150
TS -65 to + 175
Unit V V m A
A m W °C °C
ELECTRICAL CHARACTERISTICS (Rating at Tj = 25 °C unless otherwise specified)
Parameter
Symbol Test Condition
Forward Voltage
Leakage Current Capacitance
BAV19WS BAV20WS BAV21WS
IR...
