LL6263
FEATURES
:
- For general purpose applications
- Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
- This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263.
- Pb / Ro HS Free
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6) 0.134(3.4)
0.019(0.48) 0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50) Max.
MECHANICAL DATA :
Case: Mini MELF Glass Case (SOD-80C) Weight: approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00) REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 µs Square Wave Junction Temperature Storage temperature...
