GN125
ELESA and GANTERGRIFF
64.67kb
Adjustable handles. D R H h1 Main dimensions h2 h3 h4 d1 d2 H h4 Mounting hole d 6H h Weight grams GN 125-32-M6-D GN 125-32-M6-E GN 125-32-M8-D GN
TAGS
📁 Related Datasheet
GN1010 - GaAs N-Channel MES IC
(Panasonic Semiconductor)
GaAs MMICs
GN1010
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
0.65±0.15
Unit : mm
2.8 –0.3
+0.2 +0.2
1.5 –0.3
0.65±0.15
.
GN1021 - GaAs N-Channel MES IC
(Matsushita)
.
GN1022 - GaAs N Channel MES IC
(Matsushita)
.
GN13 - SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
GN1A THRU GN1M, GN13
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere
Features
For s.
GN13 - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN1A - GN13
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse curr.
GN16 - HIGH VOLTAGE RECTIFIER
(EIC)
.eicsemi.
GN16
SURFACE MOUNT HIGH VOLTAGE RECTIFIER
PRV :1600 Volts Io : 1.0 Ampere
SMA (DO-214AC)
1.1 ± 0.3
5.0 ± 0.15 4.5 ± 0.15
FEATURE.
GN1A - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
(EIC discrete Semiconductors)
GN1A - GN13
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse curr.
GN1A - SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
(GOOD-ARK Electronics)
GN1A THRU GN1M, GN13
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere
Features
For s.
GN1A4M - MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
(NEC)
.
GN1A4P - MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
(NEC)
.
