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F50D1G41LB-50YG2M Datasheet - ESMT

1.8V 1 Gbit SPI-NAND Flash Memory

F50D1G41LB-50YG2M Features

* Voltage Supply: 1.8V (1.7V~1.95V)

* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte

* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cel

F50D1G41LB-50YG2M General Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Flash memory device based on the standard parallel N.

F50D1G41LB-50YG2M Datasheet (1.47 MB)

Preview of F50D1G41LB-50YG2M PDF

Datasheet Details

Part number:

F50D1G41LB-50YG2M

Manufacturer:

ESMT

File Size:

1.47 MB

Description:

1.8v 1 gbit spi-nand flash memory.
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGR.

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TAGS

F50D1G41LB-50YG2M 1.8V Gbit SPI-NAND Flash Memory ESMT

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