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F50D1G41LB-50YG2M - 1.8V 1 Gbit SPI-NAND Flash Memory

Datasheet Summary

Description

The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum.

Features

  • Voltage Supply: 1.8V (1.7V~1.95V).
  • Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
  • Memory Cell: 1bit/Memory Cell.
  • Support SPI-Mode 0 and SPI-Mode 31.
  • Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
  • Hard.

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Datasheet preview – F50D1G41LB-50YG2M

Datasheet Details

Part number F50D1G41LB-50YG2M
Manufacturer ESMT
File Size 1.47 MB
Description 1.8V 1 Gbit SPI-NAND Flash Memory
Datasheet download datasheet F50D1G41LB-50YG2M Datasheet
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Full PDF Text Transcription

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. F50D1G41LB (2M) 1.8V 1 Gbit SPI-NAND Flash Memory Values 1.8V x1, x21, x4 66/83MHz 1-bit 20/15ns 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 1.8V (1.7V~1.
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