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E50N06 Power MOSFET

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Description

E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 6.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Datasheet Specifications

Part number
E50N06
Manufacturer
ESTEK
File Size
179.84 KB
Datasheet
E50N06-ESTEK.pdf
Description
Power MOSFET

Applications

* at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID@TC=25 ْC Continuous Drain Current, VGS@10V ID@TC=100ْC Continuous Drain Current, VG

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