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13003BR - MJE13003BR

Datasheet Summary

Features

  • Power dissipation PCM : 1.25 NPN.

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Datasheet preview – 13003BR

Datasheet Details

Part number 13003BR
Manufacturer ETC
File Size 54.28 KB
Description MJE13003BR
Datasheet download datasheet 13003BR Datasheet
Additional preview pages of the 13003BR datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE 1 unless otherwise specified Test Ic= 1000 Ic= 10 IE= 1000 VCB= 700 VCE= 400 VEB= 9 conditions A mA A V V V IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 8 5 1 1.2 3 5 0.5 2.5 V V V MHz µs µs MIN 700 400 9 1000 500 1000 40 TYP MAX UNIT V V V µA µA µA VCE= 10 V, IC= 150 mA VCE= 10 V, IC= 0.
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