Part number:
13003BR
Manufacturer:
ETC
File Size:
54.28 KB
Description:
Mje13003br.
Datasheet Details
13003BR Features
* Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base br
Datasheet Details
13003BR
ETC
54.28 KB
Mje13003br.
📁 Related Datasheet
13003BDG NPN SILICON TRANSISTOR (Unisonic Technologies)
13003BS NPN SILICON TRANSISTOR (Unisonic Technologies)
13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
13003 NPN Epitaxial Silicon Transistor (Elite Enterprises)
13003 HIGH VOLTAGE AND HIGH SPEED SWITCH (HSiN)
13003AD Bipolar Junction Transistor (Jingdao)
13003ADA NPN SILICON TRANSISTOR (Unisonic Technologies)
13003ADG NPN SILICON TRANSISTOR (Unisonic Technologies)
TAGS
13003BR Distributor