1SS239
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Silicon epitaxial schottky diode.
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1SS200 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
1SS200
Unit: mm
z Low forward voltage
: VF (3) = 0.92V (t.
1SS201 - Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse r.
1SS201 - SUPER HIGH SPEED SWITCHING DIODE
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XIN SEMICONDUCTOR
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1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
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For general purpo.
1SS220 - (1SS220 / 1SS221) SILICON SWITCHING DIODES
(NEC)
..
.
1SS226 - Switching Diodes
(Toshiba Semiconductor)
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) Note 1: For .
1SS226 - SURFACE MOUNT FAST SWITCHING DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
1SS226
SURFACE MOUNT FAST SWITCHING DIODE
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Dual Diode Series
Fast Switching Surface Mount Package Ideally Sui.
1SS226 - SILICON EPITAXIAL PLANAR DIODE
(SEMTECH)
1SS226
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applicatio.
1SS226 - Switching Diodes
(LGE)
1SS226
Switching Diodes
SOT-23
Features
Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total .
1SS226 - SWITCHING DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS226 SWITCHING DIODE
FEATURES z Low forward voltage z Fast rev.
1SS226 - 150mW SWITCHING DIODE
(MCC)
1SS226
Features
• Low Leakage Current • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free. “Green” Device (Note.
