2302
FEATURES
Trench FET Power MOSFET
MARKING:A2SHB
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
20 V
VGS Gate-Source voltage
±10
ID Drain current
-2.9 A
PD Power Dissipation
1W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current
Symbol V(BR)DSS Vth(GS)
IGSS IDSS r DS(ON) gfs
Ciss Coss Crss td(on) tr td(off) tf Qg
Qgs Qgd
VSD Is
Test conditions...
