Datasheet4U Logo Datasheet4U.com

2N5162 Datasheet - ETC

2N5162 PNP silicon RF power transistors

2N5161 (SILICON) 2N5162 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment. Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Jun.

2N5162 Datasheet (236.14 KB)

Preview of 2N5162 PDF
2N5162 Datasheet Preview Page 2 2N5162 Datasheet Preview Page 3

Datasheet Details

Part number:

2N5162

Manufacturer:

ETC

File Size:

236.14 KB

Description:

Pnp silicon rf power transistors.

📁 Related Datasheet

2N5160 Power Transistor (Motorola Semiconductor)

2N5160 PNP silicon RF power transistors (ETC)

2N5161 PNP silicon RF power transistors (ETC)

2N5163 n-channel JFET (Siliconix)

2N5164 SILICON CONTROLLED RECTIFIERS (Motorola Inc)

2N5164 SILICON CONTROLLED RECTIFIER (Solid State)

2N5164 SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)

2N5164R THYRISTORS (ETC)

TAGS

2N5162 PNP silicon power transistors ETC

2N5162 Distributor