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2N5362, 2N5358 Datasheet - ETC

2N5362 Silicon N-channel junction field-effect transistors

2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Device Dissipation @TA =25° C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg T.

2N5358-ETC.pdf

This datasheet PDF includes multiple part numbers: 2N5362, 2N5358. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N5362, 2N5358

Manufacturer:

ETC

File Size:

377.32 KB

Description:

Silicon n-channel junction field-effect transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N5362, 2N5358.
Please refer to the document for exact specifications by model.

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2N5362 2N5358 Silicon N-channel junction field-effect transistors ETC

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