2N5716 SILICON LOW NOISE N-CHANNEL JUNCTION FET

Description

2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N *CHANNEL JUNCTION FIELD *EFFECT TRANSISTORS Depletion Mode Junction Field *Effect Transis.

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Datasheet Specifications

Part number: 2N5716
Manufacturer: ETC
File Size: 220.87 KB
Datasheet: 2N5716-ETC.pdf
Description: SILICON LOW NOISE N-CHANNEL JUNCTION FET

Applications

* Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I
* High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID =

2N5716 Distributors

📁 Related Datasheet

2N5724 2N5725 2N5726 2N5727 2N5728 2N5729

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2N5716 SILICON LOW NOISE N-CHANNEL JUNCTION FET ETC

ETC 2N5716-like datasheet