2N5941
ETC
628.11kb
Npn silicon rf power transistors.
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2N5942 - NPN SILICON RF POWER TRANSISTORS
(ETC)
2N5941 (SILICON) 2N5942
The RF Lin.e
NPN SILICON RF POWER TRANSISTORS
· .. designed primarily for applications as a high-power linear amplifier from .
2N5943 - HIGH FREQUENCY TRANSISTOR
(Motorola)
2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissi.
2N5943 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(ASI)
2N5943
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications.
MAX.
2N5944 - HG RF POWER TRANSISTOR
(HGSemi)
H G Semiconductors
HG RF POWER TRANSISTOR
2N5944
ROHS Compliance,Silicon NPN POWER TRANSISTOR
HG
Note : Above parameters , ratings , limits and con.
2N5944 - RF & MICROWAVE TRANSISTOR
(Microsemi)
.
2N5944 - NPN SILICON RF POWER TRANSISTORS
(ETC)
2N5944 (SILICON) 2N5945 2N5946
The RF Line
NPN SILICON RF POWER TRANSISTORS
. designed for 7.0 to 15 Volts, UHF large signal amplifier applications re.
2N5944 - NPN SILICON RF POWER TRANSISTORS
(Motorola)
.
2N5945 - NPN SILICON RF POWER TRANSISTORS
(ETC)
2N5944 (SILICON) 2N5945 2N5946
The RF Line
NPN SILICON RF POWER TRANSISTORS
. designed for 7.0 to 15 Volts, UHF large signal amplifier applications re.
2N5945 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2N5945
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5945 is Designed for FM Land Mobile Applications in the 400 to 960 MHz.
FEATURES:
• Com.
2N5945 - NPN SILICON RF POWER TRANSISTOR
(NJS)
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i., Ona.
2N5945
TELEPHONE: (973) 376-2922 (212)227-6005
FAX: (973) 376-8960
NPN SILICON RF POWER.
