2N5941 Datasheet - ETC

2N5941 NPN SILICON RF POWER TRANSISTORS

2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) Isothermal-Resistor Design Results in Rugged Device 2N5942.

2N5941 Datasheet (628.11 KB)