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2N5981, 2N5980 Datasheet - ETC

2N5981 HIGH POWER PNP SILICON TRANSISTORS

2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982 HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications. DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982 High Current Gain - 8andwidth Product - fT = 2.0 MHz (Min) @ IC = .

2N5980-ETC.pdf

This datasheet PDF includes multiple part numbers: 2N5981, 2N5980. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N5981, 2N5980

Manufacturer:

ETC

File Size:

324.25 KB

Description:

High power pnp silicon transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N5981, 2N5980.
Please refer to the document for exact specifications by model.

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2N5981 2N5980 HIGH POWER PNP SILICON TRANSISTORS ETC

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