30J127 Datasheet, mosfet equivalent, ETC

PDF File Details

Part number:

30J127

Manufacturer:

ETC

File Size:

220.45kb

Download:

📄 Datasheet

Description:

600v 200a igbt mosfet.

TAGS

30J127

ETC

📁 Related Datasheet

30J121 - Silicon N-Channel IGBT (Toshiba)
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.

30J122 - Silicon N-Channel IGBT (Toshiba)
.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER.

30J122A - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial.

30J126 - Silicon N-Channel IGBT (Toshiba)
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Uni.

30J101 - Silicon N-Channel IGBT (Toshiba)
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç • The 3.

30J301 - Silicon N-Channel IGBT (Toshiba)
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

30J311 - Silicon N-Channel IGBT (Toshiba)
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

30J322 - Silicon N-Channel IGBT (Toshiba)
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.

30J324 - Transistor Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Uni.

30JL2C41 - HIGH EFFICIENCY DIODE STACK (Toshiba Semiconductor)
30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICA.