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3DU5C - Metal Encapsulated Silicon Phototransistor

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Datasheet Details

Part number 3DU5C
Manufacturer ETC
File Size 65.23 KB
Description Metal Encapsulated Silicon Phototransistor
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3DU5C Metal Encapsulated Silicon Phototransistor Dimension Specification  NPN Silicon Phototransistor;Model : 3DU5C  Working Voltage(Max.) : 10V;  Reverse Breakdown Voltage : 15V;  Dark Current : 0.3uA  Photocurrent : 0.5-1mA;  Power Consumption : 30mW;  Peak Wavelength : 880nM  Body Size : 7 x 5mm/ 0.28" x 0.2"(L*D);  Total Length : 28mm/ 1.
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