3DU5C Metal Encapsulated Silicon Phototransistor Dimension Specification NPN Silicon Phototransistor;Model : 3DU5C Working Voltage(Max.) : 10V; Reverse Breakdown Voltage : 15V; Dark Current : 0.3uA Photocurrent : 0.5-1mA; Power Consumption : 30mW; Peak Wavelength : 880nM Body Size : 7 x 5mm/ 0.28" x 0.2"(L D); Total Length : 28mm/ 1.1"; External Material : Metal Weight : 3g;
Datasheet Details
Part number:
3DU5C
Manufacturer:
ETC
File Size:
65.23 KB
Description:
Metal encapsulated silicon phototransistor.