AS165-59 Datasheet PDF - ETC GaAs IC High Isolation SPST Switch Positive Control Specs

AS165-59 - GaAs IC High Isolation SPST Switch Positive Control

Datasheet Summary

Description

The AS165-59 SPST IC FET switch is absorptive on the input.

Features

Single Positive Control Voltage (0, +5 V).
Base Station Synthesizer Switch.
High Isolation (45 dB @ 0.9, 1.9 GHz).
J1 Port Non-Reflective.
Miniature Low Cost MSOP-8 Plastic Package PIN 1 MSOP-8 0.0256 (0.65 mm) TYP. PIN 1.

Datasheet Details

Part number	AS165-59
Manufacturer	ETC
File Size	438.16 KB
Description	GaAs IC High Isolation SPST Switch Positive Control
Datasheet	AS165-59 Datasheet
Additional preview pages of the AS165-59 datasheet.

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Full PDF Text Transcription

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GaAs IC High Isolation SPST Switch Positive Control 0.7–2.5 GHz AS165-59 Features ■ Single Positive Control Voltage (0, +5 V) ■ Base Station Synthesizer Switch ■ High Isolation (45 dB @ 0.9, 1.9 GHz) ■ J1 Port Non-Reflective ■ Miniature Low Cost MSOP-8 Plastic Package PIN 1 MSOP-8 0.0256 (0.65 mm) TYP. PIN 1 INDICATOR 0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ. 0.193 (4.90 mm) REF. 0.012 (0.30 mm) + 0.006 (0.15 mm) - 0.002 (0.05 mm) Description The AS165-59 SPST IC FET switch is absorptive on the input. The switch features high isolation and low insertion loss. Ideal building block for base station applications where synthesizer isolation is critical. Use in conjunction with the AS164-80 SPDT switch to meet GSM synthesizer switch isolation requirements. 7.0˚ 0.038 (0.95 mm) TYP. 0.030 (0.

Published: Sep 24, 2005 |