Part number:
BNT-V1.1
Manufacturer:
ETC
File Size:
54.95 KB
Description:
Pcb.
1
2
3 +5V +12V R40
4
5
6
7
8
IN2 Q7 BLACK R22 R9 R7 R8 R25
J2
Q6 D Q5 D S G R18 C26 C27 S G
Q3 S D G Q4 S G
J1
IN1 BLUE
+12V LED1
D
R2.
BNT-V1.1
ETC
54.95 KB
Pcb.
1
2
3 +5V +12V R40
4
5
6
7
8
IN2 Q7 BLACK R22 R9 R7 R8 R25
J2
Q6 D Q5 D S G R18 C26 C27 S G
Q3 S D G Q4 S G
J1
IN1 BLUE
+12V LED1
D
R2.
📁 Related Datasheet
BNT-V13A - PCB
(ETC)
1
2
3 +5V +12V R40
4
5
6
7
8
IN2 Q7 BLACK R22 R9 R7 R8 R25
J2
Q6 D Q5 D S G R18 C26 C27 S G
Q3 S D G Q4 S G
J1
IN1 BLUE
+12V LED1
D
R2.
BNT-600A - PCB
(ETC)
1
2
3 +5V +12V R40
4
5
6
7
8
IN2 Q7 BLACK R22 R9 R7 R8 R25
J2
Q6 D Q5 D S G R18 C26 C27 S G
Q3 S D G Q4 S G
J1
IN1 BLUE
+12V LED1
D
R2.
BNT - CIT SWITCH
(CIT)
BNT
SPECIFICATIONS
Electrical Ratings Electrical Life Contact Resistance Dielectric Strength Insulation Resistance Operating Temperature Storage Tempe.
BNT01 - 1.5-3.0 GHz Wideband High Linearity LNA Gain Block
(BeRex)
BNT01
1.5 -3.0 GHz Wideband High Linearity LNA Gain Block
Preliminary Datasheet
Device Features
Internally matched to 50 ohms This can be operat.
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40-6000 MHz BroadBand AMP
Device Features
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BN10 - GLASS PASSIVATED SILICON DAMPING DIODE
(ETC)
BN10(2CN3,BZU1)
GLASS PASSIVATED SILICON DAMPING DIODE
Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weigh.
BN15D100 - NPN Transistor
(STMicroelectronics)
2STBN15D100
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Features
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
.
BN1A4M - PNP SIlicon Transistor
(NEC)
.