Part number:
F3105
Manufacturer:
ETC
File Size:
172.17 KB
Description:
Rtd elements.
ߜ ߜ ߜ ߜ
RTD Elements with Lead Wires Attached $ 38
Made From Class B, 100 Ω, 0.00385 Curve Elements 26 AWG Stranded Nickel-Plated Copper Leads, 1 m (.
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Signal Transformer Inc | F1F3-1054T-100M | HIGH POWER INDUCTOR 10UH 7.8A 24 | DigiKey | 600 | 3000 units |
$1.1
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🛒 Buy Now |
F3105
ETC
172.17 KB
Rtd elements.
ߜ ߜ ߜ ߜ
RTD Elements with Lead Wires Attached $ 38
Made From Class B, 100 Ω, 0.00385 Curve Elements 26 AWG Stranded Nickel-Plated Copper Leads, 1 m (.
📁 Related Datasheet
F3105 - Thinfilm RTD Elements
(Omega)
A Major Advance in RTD Technology
OMEGA® Thinfilm RTD Elements
Model F3105
C
$
Basic Unit
19
Shown larger than actual size
2.
2
m
m
Size: Sh.
F313PI - SGSF313PI
(ST Microelectronics)
..
..
..
..
..
..
.
F31W60CP - Power MOSFET
(SHINDENGEN)
PowerMOSFET
F31W60CP
600V31A
オン スイッチング
Feature
LowRON FastSwitching
■ OUTLINE Package：MTO-3P
ϩοτ߸هʢྫʣ
%BUF DPEF
ཧ൪߸ʢྫʣ $POUSPM /P
໊ .
F3002 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F3003 - Tube
(CSF)
.
F3007S - N-Channel MOSFET
(VBsemi)
F3007S-VB
F3007S-VB Datasheet
N-Channel 80 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuratio.
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