G5S12020PMT Silicon Carbide Schottky Diode

G5S12020PMT Description

G5S12020PMT Silicon Carbide Schottky Diode .

G5S12020PMT Features

* Zero reverse recovery current
* Zero forward recovery voltage
* Temperature independent switching behavior
* High temperature operation
* High frequency operation Benefits
* Unipolar rectifier
* Substantially reduced switching losses

G5S12020PMT Applications

* SMPS, PFC
* Solar application, UPS, EV/HEV
* Motor drives, Wind turbine, Rail traction VRRM IF (TC = 149°C) Qc 1200V 20A 80nC TO-247AC Inner Circuit G = GPT 5 = Gen5 S = SiC Schottky Diode 120 = Voltage Rating 1200V 20 = Current Rating 20A PMT = TO-247AC DDDDDD = Trace

📥 Download Datasheet

G5S12020PMT Datasheet Preview — Preview of G5S12020PMT PDF

Datasheet Details

Part number: G5S12020PMT
Manufacturer: ETC
File Size: 799.83 KB
Datasheet: G5S12020PMT-ETC.pdf
Description: Silicon Carbide Schottky Diode

📁 Related Datasheet

G5S12020U - Silicon Carbide Schottky Diode (GPT)
G5S12030PPM - 1200V/30A Silicon Carbide Power Schottky Barrier Diode (GPT)
G5S - PCB Relay (Omron Electronics)
G5S-1A - PCB Relay (Omron Electronics)
G5S-1A-CB-DC12 - PCB Relay (Omron Electronics)
G5SB - PCB Relay (Omron Electronics)
G5SBA20 - Glass Passivated Single-Phase Bridge Rectifier (Vishay)
G5SBA20-M3 - Glass Passivated Single-Phase Bridge Rectifier (Vishay)

📌 All Tags

Silicon Carbide Schottky Diode ETC

ETC G5S12020PMT-like datasheet