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G5S12020PMT Silicon Carbide Schottky Diode

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Description

G5S12020PMT Silicon Carbide Schottky Diode .

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Datasheet Specifications

Part number
G5S12020PMT
Manufacturer
ETC
File Size
799.83 KB
Datasheet
G5S12020PMT-ETC.pdf
Description
Silicon Carbide Schottky Diode

Features

* Zero reverse recovery current
* Zero forward recovery voltage
* Temperature independent switching behavior
* High temperature operation
* High frequency operation Benefits
* Unipolar rectifier
* Substantially reduced switching losses

Applications

* SMPS, PFC
* Solar application, UPS, EV/HEV
* Motor drives, Wind turbine, Rail traction VRRM IF (TC = 149°C) Qc 1200V 20A 80nC TO-247AC Inner Circuit G = GPT 5 = Gen5 S = SiC Schottky Diode 120 = Voltage Rating 1200V 20 = Current Rating 20A PMT = TO-247AC DDDDDD = Trace

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