H9014 - NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR DIE SIZE METALLIZATION Top Back DIE THICKNESS PASSIVATION BONDING PAD SIZE Emitter Base 350µm×350µm Al V/ Ni/Au Typ.
220µm Silicon-Nitride 140µm×140µm 110µm×110µm H9014 hFE CLASSIFICATION Classification hFE A 60~150 B 100~300 CD 200~600 400-1000 Collector on Backside ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector-
