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L29S800F - 8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY

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Datasheet Details

Part number	L29S800F
Manufacturer	ETC
File Size	797.36 KB
Description	8MEGABIT (1M8 /512K16) 3 VOLT CMOS FLASH MEMERY
Datasheet	L29S800F_ETC.pdf

L29S800F Product details

Description

L29S800F 8MEGABIT (1M×8 /512K×16) 3 VOLT CMOS FLASH MEMERY PR

Features

Single 3.0 V read, program, and erase Minimizes system level power requirements.
Compatible with JEDEC-standard commands 2 Uses same software commands as E PROMs.
Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I).
Minimum 100,000 program/erase cycles.
High performance 70 ns maximum access time.
Sector erase architecture One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode One 16K byte, two 8K byt.

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Published: Mar 22, 2005 |